1 January 1988 Optical-Diffraction-Based Modulation Of Photoresist Profile For Microlithography Applications. The "Optical" Tapering Of Contacts And Vias.
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Proceedings Volume 0922, Optical/Laser Microlithography; (1988); doi: 10.1117/12.968418
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States
Abstract
A novel way to obtain tapered profile in photoresist is proposed. Opening at the mask level near the principal features, some slits smaller than the resolution limit of the projection optic at a distance also smaller than it, we can obtain a controlled sloped profile in photoresist. We have already applied this method to open tapered contacts and vias without using the thermal-reflow tecnique of BPSG optimizing the configuration of the subresolved slits. There is the experimental evidence that it is retained the possibility to open contacts up to the diffraction limit of the projection optics. Our method is Patent Pending .
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco I. Buraschi, Laura Bacci, Giorgio De Santi, "Optical-Diffraction-Based Modulation Of Photoresist Profile For Microlithography Applications. The "Optical" Tapering Of Contacts And Vias.", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); doi: 10.1117/12.968418; https://doi.org/10.1117/12.968418
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KEYWORDS
Photoresist materials

Diffraction

Optical lithography

Etching

Wafer-level optics

Projection systems

Semiconducting wafers

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