Application Of Sic-X-Ray Masks For Fabricating Sub-Micron Devices

U Mackens; H Luethje; U Mackens; F Mund; S. Pongratz

doi:10.1117/12.945627

14 June 1988 Application Of Sic-X-Ray Masks For Fabricating Sub-Micron Devices

U Mackens, H Luethje, U Mackens, F Mund, S. Pongratz

Proceedings Volume 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII; (1988) https://doi.org/10.1117/12.945627
Event: Medical Imaging II, 1988, Newport Beach, CA, United States

Abstract

SiC-Au-stepper masks have been used for the fabrication of sub-micron devices by SOR based X-ray lithography in connection with a high precision alignment. As a test device we chosed a sub-micron transistor with four lithographic layers. The gatelength and the gate-width is scaled down from 2.0 pa to 0.5 wri, and 8.0 p.m to 1.0 p.m respectively. The SiC-mask blanks have been fabricated in a batch process by high temperature CVD deposition. Due to extensive process optimization SiC-membranes with a very smootA surface (RMS-roughness < 20 nm) and a Young's modulus as high as the bulk value (4.6•19 Pa) have been fabricated. Membranes of 2.5 4m in thickness having areas of up to 28 cm are being prepared with excellent transparency for synchrotron and optical radiation. For high X-ray absorption electroplated Au absorbing pattern have been applied. The combination of rigid SiC-membranes with a stress reduced Au-absorber (stress less than 1•10 Pa) will result in a mask distortion of less than 5 ppm even for a "worstcase" geometry of membrane and absorber pattern. Precise 0.5-micron pattern with an excellent control of the critical dimensions have been generated by e-beam lithography and electroplating, as well as mask copying by using synchrotron orbit radiation (SOR). Due to the excellent detection accuracy of the alignment pattern in case of SiC-masks (6 nm) a practical determined alignment accuracy of 40 nm has been obtained by using the MAX1 stepper at BESSY.

Citation Download Citation

U Mackens, H Luethje, U Mackens, F Mund, and S. Pongratz "Application Of Sic-X-Ray Masks For Fabricating Sub-Micron Devices", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945627

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available