14 June 1988 Application Of Vector Scan E-Beam Lithography In Fabrication Of Gaas Devices
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Abstract
The growing interest in the use of Gallium Arsenide semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker. In particular a whole new range of processing techniques have been needed which are significantly different to those used routinely in Silicon processing. In addition, to obtain the best operational characteristics, device feature dimensions, linewidth tolerance and overlay accuracies are significantly more demanding than current silicon practices require. This "lithographic challenge" is at its most extreme where microwave active components like MESFET transistors are required. Present day routine devices require 0.5 to 0.25 micron gate lengths whilst leading edge devices need 0.1 micron or below complicated by the need for fabrication in three dimensions for "T" section structures. These are necessary to provide adequate gate conductivity and power handling whilst maintaining the narrow gate length contact.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John B Bickley, Bernard A Wallman, "Application Of Vector Scan E-Beam Lithography In Fabrication Of Gaas Devices", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945651; https://doi.org/10.1117/12.945651
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