14 June 1988 Electron-beam direct write on gate arrays
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Abstract
An e-beam system is described which has been used to perform the final, customisation lithography on gate array chips supplied by several manufacturers. As not all of the types of gate array involved possess registration marks intended for e-beam use, an advanced registration technique employing cross-correlation has been developed to make use of such structures as are available. Electron-optical distortions have been simply corrected by using gate array chips themselves as calibration targets. The registration system is capable of acceptable performance at very low signal-to-noise ratios, and is therefore well suited to situations where the registration marks are deeply buried, e.g. in gate arrays with multiple metal levels.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J A.C Stenton, J A.C Stenton, J G.S Williams, J G.S Williams, R J.D MacAulay, R J.D MacAulay, } "Electron-beam direct write on gate arrays", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945655; https://doi.org/10.1117/12.945655
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