Translator Disclaimer
14 June 1988 New Energy-Dependent Soft X-Rav Damage In MOS Devices
Author Affiliations +
Abstract
An energy-dependent soft x-ray-induced device damage has been discovered in MOS devices fabricated using standard CMOS process. MOS devices were irradiated by monochromatic x-rays in energy range just above and below the silicon K-edge (1.84 keV). Photons below the K-edge is found to create more damage in the oxide and oxide/silicon interface than photons above the K-edge. This energy-dependent damage effect is believed to be due to charge traps generated during device fabrication. It is found that data for both n- and p-type devices lie along a universal curve if normalized threshold voltage shifts are plotted against absorbed dose in the oxide. The threshold voltage shift saturates when the absorbed dose in the oxide exceeds 1.4X105 mJ/cm3, corresponding to 6 Mrad in the oxide. Using isochronal anneals, the trapped charge damage is found to recover with an activation energy of 0.38 eV. A discrete radiation-induced damage state appears in the low frequency C-V curve in a temperature range from 1750C to 325°C.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tung-Yi Chan, Henry Gaw, Daniel Seligson, Lawrence Pan, Paul L. King, and Piero Pianetta "New Energy-Dependent Soft X-Rav Damage In MOS Devices", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945633
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Junction CCD-based x-ray sensor for dental applications
Proceedings of SPIE (September 13 1993)
Liquid-metal anode x-ray tube
Proceedings of SPIE (January 06 2004)
Performance of the XMM EPIC MOS CCD detectors
Proceedings of SPIE (November 09 1998)
DUV synchrotron exposure station at CAMD
Proceedings of SPIE (June 28 1998)

Back to Top