A Linear Monolithic MIR Imager With PbTe Photoconductive Sensors

J Vermeiren; C Claeys; G Marangoni; M D'Antoni; C Musilli; M Fabbricotti

doi:10.1117/12.945845

18 July 1988 A Linear Monolithic MIR Imager With PbTe Photoconductive Sensors

J Vermeiren, C Claeys, G Marangoni, M D'Antoni, C Musilli, M Fabbricotti

Proceedings Volume 0929, Infrared Optical Materials IV; (1988) https://doi.org/10.1117/12.945845
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

A monolithic Midwave InfraRed (MIR) sensitive array based on PbTe photoconductive sensors and a silicon CCD current integrator and multiplexer is manufactured and evaluated.. The dark current of the devices can be kept sufficiently low to allow for integration times of 4.4 msec. The responsivity and the detectivity D* of the device are quite high and can be compared to other types of IR sensors for the same wavelength range. The responsivity uniformity of the PbTeCCD is better than 10 %.

Citation Download Citation

J Vermeiren, C Claeys, G Marangoni, M D'Antoni, C Musilli, and M Fabbricotti "A Linear Monolithic MIR Imager With PbTe Photoconductive Sensors", Proc. SPIE 0929, Infrared Optical Materials IV, (18 July 1988); https://doi.org/10.1117/12.945845

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