HgCdTe Photovoltaic Detectors On Si Substrates

K R Zanio; R C Bean

doi:10.1117/12.946626

15 August 1988 HgCdTe Photovoltaic Detectors On Si Substrates

K R Zanio, R C Bean

Proceedings Volume 0930, Infrared Detectors and Arrays; (1988) https://doi.org/10.1117/12.946626
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents uninten tional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered.

Citation Download Citation

K R Zanio and R C Bean "HgCdTe Photovoltaic Detectors On Si Substrates", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); https://doi.org/10.1117/12.946626

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