15 August 1988 Review Of Band-Gap Engineered Photodiodes
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Abstract
This paper describes the use of band-gap engineering for designing photodiodes. Band-gap engineering is discussed in the context of low-noise avalanche photodiodes and new applications of Classes III and V materials. Recently published results are reviewed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M K Benedict, "Review Of Band-Gap Engineered Photodiodes", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); doi: 10.1117/12.946630; https://doi.org/10.1117/12.946630
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KEYWORDS
Diodes

Ionization

Superlattices

Signal to noise ratio

Sensors

Infrared detectors

Avalanche photodiodes

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