16 August 1988 Stable, High Quantum Efficiency Silicon Photodiodes For Vacuum-UV Applications
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Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the Si-SiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120% at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. Currently, we are investigating the possibility of using these photodiodes as vacuum ultraviolet detector standards.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raj Korde, L.Randall Canfield, Brad Wallis, "Stable, High Quantum Efficiency Silicon Photodiodes For Vacuum-UV Applications", Proc. SPIE 0932, Ultraviolet Technology II, (16 August 1988); doi: 10.1117/12.946887; https://doi.org/10.1117/12.946887

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