Paper
22 August 1988 Femtosecond Studies Of Excited Carrier Energy Relaxation And Intervalley Scattering In GaAs and AlGaAs
W. Z. Lin, M. J. LaGasse, R. W. Schoenlein, B. Zysset, J. G. Fujimoto
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947198
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We report the investigation of excited carrier scattering, energy relaxation, and intervalley scattering in GaAs and AlGaAs. Pump and continuum probe absorption saturation measurements provide evidence for femtosecond transient nonthermal carrier distributions and permit a measurement of carrier cooling processes. Measurements performed using a tunable femotsecond laser allow an investigation of intervalley scattering.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Z. Lin, M. J. LaGasse, R. W. Schoenlein, B. Zysset, and J. G. Fujimoto "Femtosecond Studies Of Excited Carrier Energy Relaxation And Intervalley Scattering In GaAs and AlGaAs", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947198
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KEYWORDS
Scattering

Absorption

Laser scattering

Gallium arsenide

Femtosecond phenomena

Picosecond phenomena

Satellites

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