22 August 1988 Hot Carrier Dynamics In Amorphous Semiconductors
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947199
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We report novel experimental and theoretical results of our investigation of hot carrier dynamics in disordered materials. Femtosecond optical spectroscopy and cw photoluminescence appear to be very promising techniques for the study of carrier relaxation in the extended states and carrier trapping in the weakly localized states. In this paper, we focus on undoped a-Si:H.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. M. Fauchet, P. M. Fauchet, K. Gzara, K. Gzara, I. H. Campbell, I. H. Campbell, D. Hulin, D. Hulin, C. Tanguy, C. Tanguy, A. Mourchid, A. Mourchid, A. Antonetti, A. Antonetti, } "Hot Carrier Dynamics In Amorphous Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947199; https://doi.org/10.1117/12.947199
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