22 August 1988 Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947188
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The paper presents a Monte Carlo study of ultrafast phenomena in polar semiconductors. The main focus is given to the analysis of cooling of carriers following subpicosecond laser excitations in GaAs and InP. Excellent agreement is found with time-resolved photoluminescence data. A strong non-equilibrium LO phonon population is found, which at high densities and low temperatures slows down the cooling of the photoexcited carriers. The role of upper valleys in the cooling process is crucial and explains the different behavior found in GaAs versus InP. A discussion of experimentally determined effective temperatures is given.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paolo Lugli, Paolo Lugli, Stephen M. Goodnick, Stephen M. Goodnick, } "Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947188; https://doi.org/10.1117/12.947188
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