22 August 1988 Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947191
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Simulations of electron dynamics in semiconductors during the first half picosecond after optical excitation by a 2-eV laser are reported. Emphasis is given to a comparison between the effects of intervalley phonon scattering, electron-electron scattering and electron-polar optical phonon interactions. The advantages of Monte Carlo simulations for the visualization of the complex processes is stressed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel W. Bailey, Daniel W. Bailey, Christopher J. Stanton, Christopher J. Stanton, Karl Hess, Karl Hess, } "Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947191; https://doi.org/10.1117/12.947191
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