22 August 1988 Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947191
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Simulations of electron dynamics in semiconductors during the first half picosecond after optical excitation by a 2-eV laser are reported. Emphasis is given to a comparison between the effects of intervalley phonon scattering, electron-electron scattering and electron-polar optical phonon interactions. The advantages of Monte Carlo simulations for the visualization of the complex processes is stressed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel W. Bailey, Daniel W. Bailey, Christopher J. Stanton, Christopher J. Stanton, Karl Hess, Karl Hess, "Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947191; https://doi.org/10.1117/12.947191
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