22 August 1988 Nonequilibrium Phonons And Carrier Cooling In Polar Semiconductors
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988); doi: 10.1117/12.947200
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We present a theoretical study of optical phonon build-up associated with the ultrafast cooling of highly photo-excited electron-hole plasmas in polar semiconductors. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates. The importance of the carrier-carrier interaction, screening, carrier confinement, and slab modes is discussed.
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Walter Potz, M.Cristina Marchetti, "Nonequilibrium Phonons And Carrier Cooling In Polar Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947200; https://doi.org/10.1117/12.947200
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KEYWORDS
Phonons

Chromium

Picosecond phenomena

Fourier transforms

Quantum wells

Electrons

Gallium arsenide

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