22 August 1988 Picosecond Studies Of Hot Phonon Generation In III-V Semiconductors
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947207
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The technique of picosecond time resolved Raman scattering in semiconductors is reviewed. With the technique, details of the initial relaxation of optically injected hot carriers in polar semiconductors can be directly studied. Experiments on intrinsic and doped GaAs measure carrier-phonon interaction times, the wavevector dependence of the hot phonon distribution, and the influence of holes on the longitudinal optical phonon lifetime. Studies in AlxGa1-As probe the influence of alloy disorder on the generation of hot phonons. In addition, because there are two optic phonon modes in AlGa1-xAs, we can experimentally measure the effect of ionicity (the frequency difference between longitudinal and transverse optical phonons) on these processes.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. A. Kash, "Picosecond Studies Of Hot Phonon Generation In III-V Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947207; https://doi.org/10.1117/12.947207
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