22 August 1988 Relaxation And Linebroadening Of Optical Phonons In Crystaline Germanium
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947206
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The relaxation rate, 1/τ , of a nonequilibrium population of zone center TO phonons in Ge is obtained by measuring the decay of the intensity of spontaneous anti-Stokes Raman scattering from two picosecond laser pulses as the pulse separation is increased., The relaxation rate 1/τ is the difference between the rate, 1/T1, of the breakup of optical phonons into two or more phonons and the inverse processes which replenish the phonon population. The lifetime contributions to the Raman linewidth, pv is ▵νℓ=1/27πTi. A comparison of the temperature dependence of Δνℓ with Av measured by Menendez and Cardona shows that the line is homogeneously broadened and is the sum of a lifetime and pure dephasing contributions due to scattering of the phonon k vector by isotopic disorder, Δν = Δνℓ +Δvd. The ability to resolve various contributions to the Raman linewidth can clarify the nature of phonon interactions.
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A. Z. Genack, A. Z. Genack, L. Ye, L. Ye, C. B. Roxlo, C. B. Roxlo, } "Relaxation And Linebroadening Of Optical Phonons In Crystaline Germanium", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947206; https://doi.org/10.1117/12.947206
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