Translator Disclaimer
22 August 1988 Time-Resolved Studies Of Phase Transitions At Semiconductor Surfaces
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947209
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
ÅOptical second-harmonic studies show that the electronic structure in the top 75 - 130 A of a crystalline Si surface loses cubic order only 150 fsec after the Si is excited by an intense 100 fsec optical pulse. This suggests that atomic disorder can be induced directly by electronic excitation, before the material becomes vibrationally excited. In contrast, the electronic properties of the equilibrium molten phase are not obtained for several hundreds of fsec.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. W.K. Tom, G. D. Aumiller, and C. H. Brito-Cruz "Time-Resolved Studies Of Phase Transitions At Semiconductor Surfaces", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947209
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top