22 August 1988 Transient Oscillations In Semiconductor Differential Transmission Spectra
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947226
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Several semiconductor materials were studied using femtosecond pump-probe spectroscopy. Oscillatory structures are observed in the differential transmission spectra of the probe pulse at the very early times when the probe pulse precedes the pump pulse. These oscillations are around the exciton frequency when pumping is either above or below the exciton, and in the vicinity of the pump frequency when the pump is tuned inside the semiconductor band. The observed data are discussed in terms of semiclassical theory.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Sokoloff, J. P. Sokoloff, M. Lindberg, M. Lindberg, B. Fluegal, B. Fluegal, M. Joffre, M. Joffre, D. Hulin, D. Hulin, S. W. Koch, S. W. Koch, A. Migus, A. Migus, A. Antonetti, A. Antonetti, N. Peyghambarian, N. Peyghambarian, } "Transient Oscillations In Semiconductor Differential Transmission Spectra", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947226; https://doi.org/10.1117/12.947226
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