22 August 1988 Ultrafast Electronic And Vibrational Effects In Amorphous Multilayers
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947211
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We present a new, purely optical technique for time-of-flight experiments in the picosecond time range using a-Si:H/a-SiNx:H multilayers. We demonstrate the presence of vibrational surface modes in a-Ge:H/a-Si:H multilayers by measuring the acoustic response in real time.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. T. Grahn, H. T. Grahn, H. J. Maris, H. J. Maris, J. Tauc, J. Tauc, Z. Vardeny, Z. Vardeny, B. Abeles, B. Abeles, } "Ultrafast Electronic And Vibrational Effects In Amorphous Multilayers", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947211; https://doi.org/10.1117/12.947211
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