18 August 1988 Carrier Lifetimes In A Hetero N-I-P-I Structure.
Author Affiliations +
Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947302
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We discuss new studies of a multiple quantum well hetero n-i-p-i structure which combines the advantages of multiple quantum wells and doping superlattices. The structure exhibits large changes in its absorption coefficient for intensities of only a few mW/cm2. We have used the spectral dependence of the nonlinear absorption coefficient to deduce photogenerated carrier lifetimes as a function of intensity.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Kost, E. Garmire, A. Danner, H. C. Lee, P. D. Dapkus, "Carrier Lifetimes In A Hetero N-I-P-I Structure.", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947302; https://doi.org/10.1117/12.947302
PROCEEDINGS
4 PAGES


SHARE
Back to Top