18 August 1988 Deep Level Induced Formation Of Wide Minibands In A Tight-Binding Superlattice: Transition From Localized To Extended States
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Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947286
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
It is shown that the introduction of deep levels in the barriers of tight-binding superlattices can have profound effects on the electronic states. By appropriate choice of the quantum well thickness and of the location of the deep center within the barrier strong mixing between the defect and superlattice states takes place. Enhancement of the miniband widths by several orders of magnitude and the creation of new Bloch states within the band-gap of the superlattice are found. Possible implementations of these new structures by Molecular Beam Epitaxy are discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fabio Beltram, Federico Capasso, "Deep Level Induced Formation Of Wide Minibands In A Tight-Binding Superlattice: Transition From Localized To Extended States", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947286; https://doi.org/10.1117/12.947286
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