18 August 1988 High-Speed Resonant-Tunneling Diodes
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Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947276
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
This paper reviews some of the progress that has occurred recently in both the theory and performance of resonant-tunneling diodes. It begins by describing the present physical understanding of the resonant-tunneling process. Recent experimental advances in resonant-tunneling oscillators are then discussed, including the demonstration of oscillations at frequencies up to 200 GHz. To better understand these results, a detailed analysis is made of the mechanisms that limit the speed of this device. This analysis includes a calculation of the quasibound state lifetime, a determination of the device capacitance from the electrostatic band-bending, and an estimate of the negative differential conductance using two different methods. On this theoretical basis, a device structure is analyzed that could oscillate up to 600 GHz.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, C. L. Chen, "High-Speed Resonant-Tunneling Diodes", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947276; https://doi.org/10.1117/12.947276


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