18 August 1988 High-Speed Resonant-Tunneling Diodes
Author Affiliations +
Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947276
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
This paper reviews some of the progress that has occurred recently in both the theory and performance of resonant-tunneling diodes. It begins by describing the present physical understanding of the resonant-tunneling process. Recent experimental advances in resonant-tunneling oscillators are then discussed, including the demonstration of oscillations at frequencies up to 200 GHz. To better understand these results, a detailed analysis is made of the mechanisms that limit the speed of this device. This analysis includes a calculation of the quasibound state lifetime, a determination of the device capacitance from the electrostatic band-bending, and an estimate of the negative differential conductance using two different methods. On this theoretical basis, a device structure is analyzed that could oscillate up to 600 GHz.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. R. Brown, E. R. Brown, T. C. L. G. Sollner, T. C. L. G. Sollner, W. D. Goodhue, W. D. Goodhue, C. L. Chen, C. L. Chen, } "High-Speed Resonant-Tunneling Diodes", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947276; https://doi.org/10.1117/12.947276

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