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18 August 1988 Hole Tunneling in Si1-xGex/Si Heterostructures Grown by Molecular Beam Epitaxy
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Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947291
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Experimental observation of resonant tunneling of holes in Si1-xGex/Si structures is presented. A negative differential resistance with a peak to valley ratio in current of 2.2/1 has been obtained at 4.2°K in a double harrier structure consisting of Si barriers 6.0 nm wide and a 3.3 nm wide Si0.79Ge0.21 quantum well. In a sample with a 5.5 nm wide Si0.75Ge0.25 well and Si barriers 10 nm in thickness, five resonant levels were observed at low temperatures. The tetragonal strain in the Si1-xGex layers was measured by X-ray diffraction, and used to calculate the alloy composition. Cross-sectional transmission electron microscopy (XTEM) observations revealed defect free epitaxy and provided precise measurements of the quantum well and barrier dimensions. The peak resonance voltages were found to be in reasonahle agreement with calculated positions of heavy hole levels in the quantum wells. Evidence for band mixing of light and heavy holes was observed when a strong magnetic field oriented along the current direction produced large shifts in some of the resonant voltages.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. C. Houghton, H. C. Liu, D. Landheer, M. Buchanan, and M. D'Iorio "Hole Tunneling in Si1-xGex/Si Heterostructures Grown by Molecular Beam Epitaxy", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947291
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