Long Wavelength Infrared Detectors Based On Intersubband Absorption And Tunneling In Doped Multiquantum Well Superlattices

B. F. Levine

doi:10.1117/12.947290

18 August 1988 Long Wavelength Infrared Detectors Based On Intersubband Absorption And Tunneling In Doped Multiquantum Well Superlattices

B. F. Levine

Author Affiliations +

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947290
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We have recently demonstrated novel high responsivity 8-12 μm detectors (comparable to HgCdTe) based on intersubband absorption and photoexcited tunneling in doped multiquantum well superlattices of GaAs/AlGaAs. These detectors have the potential advantage over HgCdTe of a more mature materials and processing technology and the possibility of direct integration with high performance GaAs FETs. In this talk we will discuss the detailed physics and device operation of these detectors, as well as our newest results indicated below.

Citation Download Citation

B. F. Levine "Long Wavelength Infrared Detectors Based On Intersubband Absorption And Tunneling In Doped Multiquantum Well Superlattices", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947290

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