18 August 1988 Optical Investigation Of Resonant Mixing Between Electronic And Optical Vibrational Levels In GaAs/AlGa1-xAs Single Quantum Wells
Author Affiliations +
Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947312
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The linear polarization behavior of electron-heavy hole excitonic recombination is studied on two types of single square quantum wells (SSQW). The SSQW structures with the special feature that the heavy hole to light hole separation is near an optical phonon frequency of the structure (called "double resonance" type) show a strong linear polarization dependence on the incident energy. The "ordinary" type SSQW (i.e. not of the double resonance type) show little or no linear polarization. The double resonance samples also show reduction of the photoluminescence linewidth when the incident energy is near the light hole to electron energy separation. These observations indicate a strong modification of the confined heavy hole level due to the mixing between the heavy hole and light hole plus an optical phonon mode.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. C. Tang, W. C. Tang, Pudong Lao, Pudong Lao, A. Madhukar, A. Madhukar, } "Optical Investigation Of Resonant Mixing Between Electronic And Optical Vibrational Levels In GaAs/AlGa1-xAs Single Quantum Wells", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947312; https://doi.org/10.1117/12.947312
PROCEEDINGS
4 PAGES


SHARE
Back to Top