18 August 1988 Properties And Band Structure Of Short-Period Compensated N-I-P-I Doping Superlattices
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Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947304
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Dispersion and miniband structure of GaAs compensated n-i-p-i doping superlattices have been calculated by using matrix transfer method, multistep potential approach, and numerical calculations. The results are compared with energy levels calculated by use of harmonical-oscillator-type potential well. The dependence of the effective energy gaps of heavy and light holes on the period length L is also discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. X. Jiang, H. Yan, "Properties And Band Structure Of Short-Period Compensated N-I-P-I Doping Superlattices", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947304; https://doi.org/10.1117/12.947304
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