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15 August 1988 Atomic Layer Epitaxy Of II-VI Compounds
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988)
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Very recently, atomic layer epitaxy of II-VI compounds has attracted considerable attention 1-6), which includes investigations of initial stages of heteroepitaxy1,2), photoluminescence characterization 3,4), and RHEED intensity variations 5,6). From a preliminary investigation on structural quality of Zn-chalcogenide layers, it is suggested that ALE-grown materials at a low substrate temperature are of better quality than MBE-grown materials at the same substrate temprature1). In order to avoid interdiffusion at heterointerfaces of superlattice structures, low temperature growth is preferable. However, low temperature growth is not favorable for growth of good quality films in terms of PL characterization. In this paper, we have made PL characterization of Zn-chalcogenide layers grown by ALE at a temperature ranging from 150 - 250°C, which is much lower than the usual growth temperature of 300°C, in comparison with those grown by MBE at the same temperature. It is found that PL spectra of ALE films are dominated by excitonic emissions, while those of MBE grown films are dominated by deep level emissions, which suggests that a good quality film grows by ALE and that ALE films are better than MBE ones in terms of PL characterization. Furthermore, we have investigated surface processes associated with ALE growth on the substrate by observing RHEED intensity variations.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takafumi Yao "Atomic Layer Epitaxy Of II-VI Compounds", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988);

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