15 August 1988 Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation
Author Affiliations +
Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947348
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The influence of the lattice mismatch strain on the growth mode and formation of defects is examined via computer simulations. Striking differences in the growth mode are suggested for compressive versus tensile strain in the overlayer. It is proposed and shown that the genesis of misfit induced defects is laid in the initial stages of growth at the coalescence boundaries of kinetically controlled clusters exceeding a critical size needed for epitaxical registry.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. V. Ghaisas, S. V. Ghaisas, A. Madhukar, A. Madhukar, } "Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947348; https://doi.org/10.1117/12.947348
PROCEEDINGS
16 PAGES


SHARE
Back to Top