15 August 1988 Criteria For (111) Oriented Heteroepitaxial Growth Of Zinc Blende Crystals On (10U) Oriented Substrates
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947354
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
In order to account for (100) and/or (111) oriented heteroepitaxial growth of CdTe on (100)GaAs, we have proposed a theoretical model based on the formation, during the early stage of the growth, of stable clusters of chemically bound tellurium atoms. In this model we consider not only geometrical features, but also the constraints for symmetries, bond - angles and bond-lengths associated with the growth of CdTe along the requested orientation. In analysing the applicability and the use of this model in more general cases, we are able to express, through lattice mismatch, relatively precise criteria for explaining and predicting possible regularities in the heteroepitaxial growth features on (100) surfaces of zinc blende crystal structures. As an example, it is explained why ZnTe, which is very similar to CdTe, is always (100) oriented on (100) GaAs and never (111). It is also shown why for ternary compounds the (111) oriented growth is obtained only for compositions x < 0,17 in the case of ZnxCdi-xTe on GaAs and x < 0,53 for MnxCdi-xTe-GaAs.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis Bailly, Francis Bailly, Michel Barbe, Michel Barbe, Gerard Cohen-Solal, Gerard Cohen-Solal, } "Criteria For (111) Oriented Heteroepitaxial Growth Of Zinc Blende Crystals On (10U) Oriented Substrates", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947354; https://doi.org/10.1117/12.947354

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