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15 August 1988 Electron-Beam Exposure Heteroepitaxial Growth Of GaAs/CaF2/Si Structures
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988)
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hetero-epitaxial growth of GaAs on CaF2 /Si substrate for such applications. First of all, a brief explanation about the features of group IIa fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seijiro Furukawa, Hiroshi Ishiwara, Tanemasa Asano, and Hee Chul Lee "Electron-Beam Exposure Heteroepitaxial Growth Of GaAs/CaF2/Si Structures", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988);

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