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15 August 1988 Electron Beam Source Molecular Beam Epitaxy Of AlxGa1-xAs Graded Band Gap Device Structures
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947365
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
A new method has been developed for the growth of graded band-gap AlxGa1-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGa1-xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and M-shaped barrier superlattices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. J. Malik, A. F. J. Levi, B. F. Levine, R. C. Miller, D. V. Lang, L. C. Hopkins, and R. W. Ryan "Electron Beam Source Molecular Beam Epitaxy Of AlxGa1-xAs Graded Band Gap Device Structures", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947365
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