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15 August 1988 Growth Of Quantum Wire Superlattices And Tilted Superlattices By Molecular Beam Epitaxy
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988)
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
We report the successful growth of tilted superlattices (TSLs) obtained by molecular beam epitaxy (MBE) deposition of fractional monolayer superlattices, (GaAs)m(AlAs)n, (m,n < 1), on vicinal (001) GaAs substrates. In these structures, the tilt angle of the TSL interfaces with respect to the (001) orientation and the TSL period may be adjusted Independently by choosing the values of m + n and the mis-orientation angle of the vicinal substrate plane. The TSL permits the control of a second dimension in crystal growth and offers a wealth of new opportunities for devices and structures. We present the analysis of several TSL structures by transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). The experimental results confirm that growth conditions on vicinal (001) surfaces can be selected to assure that growth proceeds as layer-by-layer step propagation with minimal island nucleation on the step terraces. Furthermore, the agreement with theory demonstrates directly the monoatomic nature of the surface steps. The power of this new growth technique is demonstrated by growing superlattices of quantum wire-like structures in a single growth.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Gaines, P. M. Petroff, H. Kroemer, R. J. Simes, R. S. Geels, and J. H. English "Growth Of Quantum Wire Superlattices And Tilted Superlattices By Molecular Beam Epitaxy", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988);

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