15 August 1988 Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947373
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The Close Spaced Vapor Transport has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. After a presentation of the technique involved in the growth, scanning electron microscopy and X-rays diffractometry studies show that the deposit is mainly cubic ZnSe with a slight contribution of hexagonal ZnSe. The influence of the deposition conditions on the growth rate is reported, and the two existing models are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerard Perrier, Gerard Perrier, Robert Philippe, Robert Philippe, Jean-Pol Dodelet, Jean-Pol Dodelet, } "Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947373; https://doi.org/10.1117/12.947373
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