15 August 1988 In-Situ Rapid Isothermal Processing Of II-A Fluorides On Compound Semiconductors
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947380
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We have developed a new technique for the realization of dielectric films (II-A fluorides and their mixtures) on corn-pound semiconductors. In this process, dielectric films are deposited in an e-beam system at room temperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. In this paper, preliminary results of electrical and structural characteristics of CaF2 and CazSri-xF2 films on GaAs and InP are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Singh, R. Singh, F. Radpour, F. Radpour, J. Narayan, J. Narayan, } "In-Situ Rapid Isothermal Processing Of II-A Fluorides On Compound Semiconductors", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947380; https://doi.org/10.1117/12.947380
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