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15 August 1988 Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100)
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947382
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We have grown GaAs on Si (100) substrates misoriented 4° from the [110] direction using a KrF pulsed excimer laser-assisted Molecular Beam Epitaxy. In this work, we report the systematic study of 2000 A GaAs films grown on Si using a two step growth sequence. Raman scattering, Rayleigh scattering, near band edge photoluminescence, cross-sectional TEM microscopy, in situ RHEED, and optical surface roughness profiles are used to characterize the differences between laser irradiated and non-irradiated areas of the samples. We find a reduction of defects, an enhancement of photoluminescence intensity, and no evidence for laser-induced melting for power levels of up to 25 MW/cm2. Photoluminescence linewidths at 4.5K are comparable to widths observed for 1 micrometer thick GaAs films grown on Si.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. J. Grunthaner, A. Madhukar, J. K. Liu, P. D. Lao, W. C. Tang, and S. Guha "Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100)", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947382
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