15 August 1988 Long Wavelength Photoluminescence Of InAs1_xSbx (0<x<l) Grown By Molecular Beam Epitaxy On (100) InAs
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947370
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
InAs1_xSbx materials are of great importance due to their potential of replacing HgCdTe material for the fabrication of infrared sources and detectors operating at wavelength 8-12 μm spectral range where the atmospheric absorption is minimum. Heteroepitaxial layers of InAsi_xSbx materials have been successfully prepared by molecular beam epitaxy (MBE) over the complete compositional range (0<x<1) on (100)InAs substrates. Details of the MBE system and the growth have been described elsewhere.1,2 Photoluminescence has been employed to characterize the material quality and explore the possibility of applications in optical sources. Band-edge photoluminescence peak wavelengths as long as 8 pm have been obtained for the first time among III-V compound semiconductor materials in spite of the existence of a large lattice mismatch up to N6.4%. These results are indicative of high quality material.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Y. Yen, M. Y. Yen, R. People, R. People, K. W. Wecht, K. W. Wecht, A. Y. Cho, A. Y. Cho, } "Long Wavelength Photoluminescence Of InAs1_xSbx (0<x<l) Grown By Molecular Beam Epitaxy On (100) InAs", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947370; https://doi.org/10.1117/12.947370
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