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15 August 1988 Photoluminescence And Electrical Properties Of MBE-Grown And Post-Annealed Zinc Selenide
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988)
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Electrical and photoluminescence (PL) measurements of MBE-grown ZnSe films on GaAs substrates are reported as a function of growth temperature and post-annealing treatments in inert atmosphere. Isothermal and isochronal annealing of ZnSe indicate a reduction of free carrier concentration with post-annealing temperature > 400°C. From capacitance-voltage (C-V) profiling measurements, carrier concentration reduction is deduced to be a bulk effect. Concomitant with the loss of free carriers is a reduction of donor bound exciton intensity as observed from the low temperature PL measurements. Room temperature PL measurements on annealed gnSe show dominant deep level emission. Zinc selenide grown at elevated temperature (400 C) also reveals electrical and PL behavior similar to ZnSe subjected to post-annealing treatment at elevated temperature. The results are correlated with the formation of intrinsic defects compensating the unintentionally incorporated background donor impurities.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. K. Mohapatra, G. A. Haugen, H. Cheng, J. E. Potts, and J. M. De Puydt "Photoluminescence And Electrical Properties Of MBE-Grown And Post-Annealed Zinc Selenide", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988);


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