15 August 1988 Status Of Fluoride-Semiconductor Heteroepitaxial Growth
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947378
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Molecular beam epitaxy of structures associating alkaline-earth fluorides and semiconductors has received considerable attention in the last few years. In this paper, we review the results published paying special attention to structures associating Ca, Sr, Ba fluorides and Si, GaAs, InP semiconductors. General trends for fluoride/semiconductor growth behavior are emphasized, as well as the problems encountered in the growth of semiconductor/fluoride heterostructures.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antonio Munoz-Yague, Chantal Fontaine, "Status Of Fluoride-Semiconductor Heteroepitaxial Growth", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947378; https://doi.org/10.1117/12.947378
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