15 August 1988 TEM And HREM Characterization Of (Hg,Cd)Te/GaAs And CdTe/GaAs Interfaces
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947359
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Thin (Hg,Cd)Te and CdTe films have been grown on GaAs (100) substrates respectively by organometallic vapor phase epitaxy and close-spaced vapor transport method. Electron microscopic observations have been carried out in order to characterize the crystallographic quality of the epitaxial layers. In the case of (100) epitaxial orientation, high resolution lattice images have revealed the presence of misfit dislocations, essentially Lomer dislocations, exactly located in the plane of the interface. When the growth of the epitaxial layer of CdTe has taken place in the <111> direction, the most visible defects are twins and microtwins present in the film near the interface.
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A. M. Gue, A. Mazel, M. Barbe, G. Cohen-Solal, D. Esteve, "TEM And HREM Characterization Of (Hg,Cd)Te/GaAs And CdTe/GaAs Interfaces", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947359; https://doi.org/10.1117/12.947359
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