15 August 1988 The Effect Of Surface Stoichiometry On The Initial Stages Of Heteroepitaxy Of II-VI Compounds Grown On (001)GaAs By Molecular Beam Epitaxy
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947350
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The surface stoichiometry of GaAs substrates influences considerably the initial stages of heteroepitaxy of II-VI compounds on (001)GaAs by molecular beam epitaxy. The growth mechanism of ZnSe has been investigated using a RHEED observation system, with which the intensity and half width of diffraction spots are measured. The growth mechanism of ZnSe on thermally cleaned substrates is the Stranski-Krastanov mode, while that on As-stabilized GaAs substrates is varied from the Stranski-Krastanov mode to the two-dimensional layer by layer growth mode with growth conditions of ZnSe. For Se rich conditions, which is characterized by a (2x1) reconstructed surface, the two-dimensional growth mode dominates, while for Zn-rich growth conditions, which is characterized by a c(2x2) reconstructed surface, the Stranski-Krastanov mode dominates.
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Takafumi Yao, Takafumi Yao, Masami Fujimoto, Masami Fujimoto, Hiroshi Nakao, Hiroshi Nakao, } "The Effect Of Surface Stoichiometry On The Initial Stages Of Heteroepitaxy Of II-VI Compounds Grown On (001)GaAs By Molecular Beam Epitaxy", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947350; https://doi.org/10.1117/12.947350
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