15 August 1988 The Influence Of Surface Structure On Diamond-Lattice Epitaxial Growth From The Vapor Phase
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947363
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The results of a Monte Carlo simulation of crystal growth on the (001) face of diamond-structure semiconductors from the vapor phase are presented. The model shows that growth occurs by adatom clustering, cluster growth, and coalescence. The clusters are anisotropic on specular surfaces due to the influence of the symmetry of the surface reconstruction on diffusion. Anisotropic adatom motion is also shown to give rise to convolution of alternate step edges on terraced surfaces. The reconstruction is predicted to consist of large (2x1) domains on flat surfaces but small domains during growth at partial monolayer coverages. A short-range diffusion event is proposed to permit domain growth and reconstruction dimer alignment. Reconstruction domain formation and growth is predicted to produce oscillations in the half-order spots of reflection high-energy electron diffraction patterns.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rockett, A. Rockett, } "The Influence Of Surface Structure On Diamond-Lattice Epitaxial Growth From The Vapor Phase", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947363; https://doi.org/10.1117/12.947363
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