16 August 1988 Effects Of Rapid Thermal Postoxidation Of Rapid Thermally Nitrided Oxides
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947401
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The chemical and electrical characteristics of ~10 nm MOS gate dielectrics formed by the rapid thermal postoxidation of rapid thermally nitrided oxides (RTO/RTN oxides) are described. TEM micrographs show that the interface smoothed by the RTN (1000°C,60s) of SiO2 is roughened by the subsequent heavy RTO (1100°C,60s). The fixed charge and interface state densities of the produced films are strongly dependent on the degree of reoxidation of Si at the interface. MOS capacitor results indicate that, as compared to pure oxide films, the RTO/RTN oxide samples exhibit reduced bulk trap and interface state generation rates under high electrical field stress. Optimized RTN and RTO processes can produce thin dielectrics with enhanced charge to breakdown (QBD strength and flat band voltage (VFB) stability. This multiple rapid thermal processing (RTP) procedure is found to be compatible with MOSFET fabrication technology and to reduce weak spots in thermal oxides. The electrical characteristics of n-channel transistors fabricated with RTO/RTN dielectrics are comparable to those of transistors fabricated with pure oxides.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Lee, D. K. Shih, D. L. Kwong, "Effects Of Rapid Thermal Postoxidation Of Rapid Thermally Nitrided Oxides", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947401; https://doi.org/10.1117/12.947401
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