16 August 1988 Growth Of Compound Semiconductor By Atomic Layer Epitaxy And Applications
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947389
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Atomic layer epitaxy is a new growth which proceeds by the alternate deposition of column III and column V species. The deposition is self-limiting, and only one monolayer is deposited per growth cycle independent of the column III or V fluxes. This technique is thus able to achieve better control of layer thickness and uniformity, abrupt interfaces, ordered structure, planer doping, low temperature growth and others. The potential application of atomic layer epitaxy will be reviewed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Salah M. Bedair, Salah M. Bedair, "Growth Of Compound Semiconductor By Atomic Layer Epitaxy And Applications", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947389; https://doi.org/10.1117/12.947389
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