16 August 1988 Impurity Phase Transitions In Silicon Emitter Junctions
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947404
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
A new type of defect occurring in n++p+-junctions prepared by the diffusion of high concentrations of phosphorus and gallium into neutron transmutation doped (111)-silicon is reported. The defect is identified as a complex of a metal precipitate interacting with a Shockley-Read type of generation centre and has a strong influence on the recombination and generation properties of emitter structures. Instabilities in the generation current, occurring at well defined temperatures and influenced by the electric field, are interpreted as structural or phase changes among the defects. The concentration of the defects is dependent on the concentration of gallium.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gert I. Andersson, Gert I. Andersson, Olof Engstrom, Olof Engstrom, } "Impurity Phase Transitions In Silicon Emitter Junctions", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947404; https://doi.org/10.1117/12.947404
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