16 August 1988 In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs Heterostructures
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947390
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We report for the first time the use of ion beam assisted etching in the lOad-lock of a molecular beam epitaxy (MBE) chamber for in-situ patterning and regrowth of GaAs/AlGaAs microstructures. Microstructural analysis with electron microscopy indicates that the quality of the overgrowth improves dramatically as the substrate temperature for regrowth is raised from 580 C to 680 C. Using ion beam assisted etching in conjunction with fluoride masks compatible both with the electron beam lithography process and the need for low reactivity with GaAs at elevated growth temperatures, epitaxical single-crystal AlGaAs layers have been regrown on sub-micron structures.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Scherer, A. Scherer, J. P . Harbison, J. P . Harbison, D. M. Hwang, D. M. Hwang, E. D . Beebe, E. D . Beebe, } "In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs Heterostructures", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947390; https://doi.org/10.1117/12.947390
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