16 August 1988 Low Thermal Expansion Polyimide Buried Ridge-Waveguide AlGaAs Laser Diode
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947385
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
A novel wafer processing technology to fabricate ridge-waveguide laser diode has been developed, using a low thermal expansion polyimide and an etch-back process. A low threshold current of 15mA, a high To value of 145K, and a maximum power output higher than 30mW/facet under cw operation have been achieved in a GRIN-SCH single quantum well PBR(Polyimide Buried Ridge) laser emitting at 780nm. High temperature oscillation at 1900C and To of 165K have been also obtained in a GRIN-SCH multiple quantum well PBR laser. A planar configuration in the present PBR laser is suitable for opto-electronic integration.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumihiko Sato, Hiroshi Imamoto, Koichi Imanaka, Mikihiko Shimura, "Low Thermal Expansion Polyimide Buried Ridge-Waveguide AlGaAs Laser Diode", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947385; https://doi.org/10.1117/12.947385
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