Photochemical Vapor Deposition Of Gallium Arsenide

D. P. Norton; P. K. Ajmera

doi:10.1117/12.947391

16 August 1988 Photochemical Vapor Deposition Of Gallium Arsenide

D. P. Norton, P. K. Ajmera

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947391
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Photochemical vapor deposition (PCVD) of GaAs on fused silica, silicon and GaAs substrates is reported here. A 1000 watt Hg-Xe arc lamp is utilized as the light source with arsine and triethylgallium serving as the reactants. Epitaxial film growth is shown to occur for deposition on both GaAs and silicon substrates. These thin films are characterized using Auger electron spectroscopy, energy dispersive spectrometry, scanning electron microscopy and x-ray diffraction. The results of this study demonstrate the effectiveness in utilizing both photolysis and pyrolysis to achieve deposition.

Citation Download Citation

D. P. Norton and P. K. Ajmera "Photochemical Vapor Deposition Of Gallium Arsenide", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947391

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available