16 August 1988 Photochemical Vapor Deposition Of Gallium Arsenide
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947391
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Photochemical vapor deposition (PCVD) of GaAs on fused silica, silicon and GaAs substrates is reported here. A 1000 watt Hg-Xe arc lamp is utilized as the light source with arsine and triethylgallium serving as the reactants. Epitaxial film growth is shown to occur for deposition on both GaAs and silicon substrates. These thin films are characterized using Auger electron spectroscopy, energy dispersive spectrometry, scanning electron microscopy and x-ray diffraction. The results of this study demonstrate the effectiveness in utilizing both photolysis and pyrolysis to achieve deposition.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. P. Norton, D. P. Norton, P. K. Ajmera, P. K. Ajmera, "Photochemical Vapor Deposition Of Gallium Arsenide", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947391; https://doi.org/10.1117/12.947391
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